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 DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
4.50.1
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
* Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * Large PT in Small Package PT : 2 W with 16 cm2 x 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
0.8 MIN. E
0.42 0.06
1.60.2
1.50.1
C
B
0.420.06 1.5 0.47 0.06 3.0 0.41 +0.05
-0.03
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT* Rth(j-a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 -65 to +150 V V V mA W C/W C C
Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89)
* mounted on 16 cm2 x 0.7 mm Ceramic Substrate
Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan
4.00.25
2.50.1
(c)
1985
2SC3357
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** S21e NF NF
2
MIN.
TYP.
MAX. 1.0 1.0
UNIT
TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA
A A
50
120 6.5 0.65 9 1.1 1.8
300 GHz 1.0 pF dB dB 3.0 dB
VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz
*
Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification
Class Marking hFE RH RH 50 to 100 RF RF 80 to 160 RE RE 125 to 250
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2
PT-Total Power Dissipation-W
FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz
2.0
Cre-Feed-back Capacitance-pF
Ceramic Substrate 16 cm2 x 0.7 mm 1.0
1
Free Air
0.5
Rth(j-a) 312.5 C/W
0
50
100
150
0.3 0
0.5
1
2
5
10
20
30
TA-Ambient Temperature-C
VCB-Collector to Base Voltage-V
2
2SC3357
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz
|S21e|2-Insertion Gain-dB
hFE-DC Current Gain
100
10
50
5
20
10 0.5
1
5
10
50
0 0.5
1
5
10
50 70
IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 10
IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax
fT-Gain Bandwidth Product-MHz
5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 10 5.0 10 30 IC-Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1.0 GHz Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB
20 |S21e|2
10
VCE = 10 V IC = 20 mA 0 0.1 0.2 0.4 0.6 0.8 1.0 f-Frequency-GHz INTERMODULATION DISTORTION vs. COLLECTOR CURRENT
-80 NF-Noise Figure-dB 5 4 3 2 IM2, IM3 (dB) -70 IM3
-60 IM2 -50
0 0.5
1
5
10
50 70
IC-Collector Current-mA
-40
VCE = 10 V at V0 = 100 dB V/50 Rg = Re = 50 IM2 f = 90 + 100 MHz IM3 f = 2 x 200 - 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA
-30
3
2SC3357
S-PARAMETER
VCE = 10 V, IC = 40 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.196 0.103 0.056 0.024 0.008 0.039 0.072 0.102 0.129 0.151 S11 -94.4 -118.3 -131.1 -43.7 -2.0 13.1 11.8 9.6 8.6 9.8 S21 13.023 6.852 4.632 3.527 2.854 2.421 2.118 1.887 1.681 1.579 S21 102.4 89.2 78.3 75.9 68.7 65.7 59.0 57.1 52.5 51.4 S12 0.043 0.081 0.118 0.152 0.188 0.218 0.255 0.278 0.308 0.339 S12 74.5 77.4 77.5 78.0 78.4 75.7 71.7 73.1 71.3 71.8 S22 0.444 0.398 0.399 0.414 0.440 0.461 0.479 0.499 0.515 0.537 S22 -21.1 -25.3 -26.9 -28.9 -33.5 -33.3 -36.3 -35.5 -38.8 -35.9
VCE = 10 V, IC = 20 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.130 0.073 0.037 0.010 0.024 0.056 0.093 0.124 0.151 0.174 S11 -109.2 -134.1 -146.6 177.1 23.7 17.2 13.8 12.0 11.0 13.4 S21 13.430 6.930 4.690 3.560 2.878 2.439 2.133 1.898 1.693 1.591 S21 98.1 87.2 79.4 75.2 68.2 65.4 59.0 57.3 52.9 52.0 S12 0.042 0.081 0.119 0.154 0.191 0.220 0.257 0.280 0.311 0.341 S12 79.0 80.6 79.4 79.7 76.5 76.8 72.9 74.0 72.4 72.8 S22 0.403 0.382 0.392 0.412 0.440 0.463 0.483 0.504 0.519 0.542 S22 -22.1 -24.7 -25.6 -27.1 -31.9 -32.3 -35.7 -35.3 -38.4 -36.3
4
2SC3357
S11e, S22e-FREQUENCY CONDITION VCE = 10 V
8 0.0 2 0.4 20 1
0.9
1.0
0.8
1.2
9 0.0 1 0.4
0.10 0.40 110
0.7
0.11 0.39 100
0.12 0.38
0.13 0.37
90
0.14 0.36 80
0.15 0.35
70
1.4
0.1 6 0.3 4
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 EN ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C
5 0.
07 0. 3 4 0. 0 13
1.6
6 00
1.8
0.1 0.3 7 3
0.
2.0
0.2
50
0. 18 32
0.6
19 0. 31 0.
( -Z-+-J-XTANCE CO ) MPO
N
T EN
0.4
0 0.2 0 0.3
40
O
WAVELEN G
0 1.
S11
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
0.1
IC =0.620 mA
0. 8
IC = 20 mA f = 2.0 GHz
3. 0
0
0.2
1.
E NC TA X - AC -J -O RE --Z
)
0.3
(
0.
4
E IV AT
0.
5
2.0
0.6
1.8
1.6
0.7
0.8
1.4
0.9
1.2
1.0
S21e-FREQUENCY CONDITION VCE = 10 V IC = 20 mA 90 120 f = 0.2 GHz 60
120 f = 2.0 GHz
150
S21e
30
150 S12e
f = 2.0 GHz 180 3 6 9 12 15 0 180
f = 0.2 GHz 0.1 0.2 0.3 0.4 0.5 0
-150
-30
-150
-120 -90
-60
-120 -90
10
f = 0.2 GHz
0.4
20
f = 0.2 GHz
50
REACTANCE COMPONENT R ---- 0.2 ZO
(
)
5.0
4.0
0.
32
0.
18 0 -5
3 0.3 7
0.1
-6
4 0.3 6 0.1
0
0.35 0.15 -70
0.36 0.14 -80
1.0
0.8
0.8
0.6
0.6
0.37 0.13
0.4
0.4
0.2
0.2
-90
0.38 0.12
0.39 0.11 -100
0.40 0.10 -11 0
0.4 1 0.0 0.4 9 0.0 2 20 8
-1
NE G
-1
0. 4 0. 3 07 30
0.
4
0.6
3.
0.8
0
1 0.2 9 0.2 30
0.3
4.0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
1.0
6.0
0.2
10
0.1
f = 20 GHz
20
50
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 2 -20
0.2 8
0. 29 0.2 1 0.3 -3 0.2 0 0 0
0. 3 -4 0.1 1 0 9
S12e-FREQUENCY CONDITION 90 60 VCE = 10 V IC = 20 mA
30
-30
-60
5
2SC3357
[MEMO]
6
2SC3357
[MEMO]
7
2SC3357
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5


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